Effects of substrate surface conditions on dose controllability of plasma doping process

Kazuo Tsutsui; Ryota Higaki; Takahisa Sato; Yuichiro Sasaki; Hideki Tamura; Bunji Mizuno; Hiroshi Iwai

Effects of substrate surface conditions on dose controllability of plasma doping process

Kazuo Tsutsui^*, Ryota Higaki, Takahisa Sato, Yuichiro Sasaki, Hideki Tamura, Bunji Mizuno, Hiroshi Iwai

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to conference › Paper › peer-review

5 Scopus citations

Abstract

Phenomena affecting dose control of plasma doping processes for fabrication of ultra shallow junctions were investigated. One was doping from neutral gas species during plasma doping, which was revealed by the experiment of plasma pre-treatment followed by gas phase doping of B. It was found that Ar or He plasma activated Si surface so that introduction of B from neutral B ₂H₆ gas phase was enhanced. The other one was dose variation by chemical treatments using SPM or diluted HF. It was found that SPM treatment reduced loss of B dose in the following annealing process while HF treatment increased it.

Original language	English
Pages	439-444
Number of pages	6
State	Published - 2004
Event	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: 18 Oct 2004 → 21 Oct 2004

Conference

Conference	2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
Country	China
City	Beijing
Period	18/10/04 → 21/10/04

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@conference{73ee8b19819f4a92a9a29498142dbcea,

title = "Effects of substrate surface conditions on dose controllability of plasma doping process",

abstract = "Phenomena affecting dose control of plasma doping processes for fabrication of ultra shallow junctions were investigated. One was doping from neutral gas species during plasma doping, which was revealed by the experiment of plasma pre-treatment followed by gas phase doping of B. It was found that Ar or He plasma activated Si surface so that introduction of B from neutral B 2H6 gas phase was enhanced. The other one was dose variation by chemical treatments using SPM or diluted HF. It was found that SPM treatment reduced loss of B dose in the following annealing process while HF treatment increased it.",

author = "Kazuo Tsutsui and Ryota Higaki and Takahisa Sato and Yuichiro Sasaki and Hideki Tamura and Bunji Mizuno and Hiroshi Iwai",

year = "2004",

language = "English",

pages = "439--444",

note = "null ; Conference date: 18-10-2004 Through 21-10-2004",

}

Effects of substrate surface conditions on dose controllability of plasma doping process. / Tsutsui, Kazuo; Higaki, Ryota; Sato, Takahisa; Sasaki, Yuichiro; Tamura, Hideki; Mizuno, Bunji; Iwai, Hiroshi.

2004. 439-444 Paper presented at 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, China.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Effects of substrate surface conditions on dose controllability of plasma doping process

AU - Tsutsui, Kazuo

AU - Higaki, Ryota

AU - Sato, Takahisa

AU - Sasaki, Yuichiro

AU - Tamura, Hideki

AU - Mizuno, Bunji

AU - Iwai, Hiroshi

PY - 2004

Y1 - 2004

N2 - Phenomena affecting dose control of plasma doping processes for fabrication of ultra shallow junctions were investigated. One was doping from neutral gas species during plasma doping, which was revealed by the experiment of plasma pre-treatment followed by gas phase doping of B. It was found that Ar or He plasma activated Si surface so that introduction of B from neutral B 2H6 gas phase was enhanced. The other one was dose variation by chemical treatments using SPM or diluted HF. It was found that SPM treatment reduced loss of B dose in the following annealing process while HF treatment increased it.

AB - Phenomena affecting dose control of plasma doping processes for fabrication of ultra shallow junctions were investigated. One was doping from neutral gas species during plasma doping, which was revealed by the experiment of plasma pre-treatment followed by gas phase doping of B. It was found that Ar or He plasma activated Si surface so that introduction of B from neutral B 2H6 gas phase was enhanced. The other one was dose variation by chemical treatments using SPM or diluted HF. It was found that SPM treatment reduced loss of B dose in the following annealing process while HF treatment increased it.

UR - http://www.scopus.com/inward/record.url?scp=21644454460&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:21644454460

SP - 439

EP - 444

Y2 - 18 October 2004 through 21 October 2004

ER -