Effects of substrate surface conditions on dose controllability of plasma doping process

Kazuo Tsutsui*, Ryota Higaki, Takahisa Sato, Yuichiro Sasaki, Hideki Tamura, Bunji Mizuno, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

5 Scopus citations

Abstract

Phenomena affecting dose control of plasma doping processes for fabrication of ultra shallow junctions were investigated. One was doping from neutral gas species during plasma doping, which was revealed by the experiment of plasma pre-treatment followed by gas phase doping of B. It was found that Ar or He plasma activated Si surface so that introduction of B from neutral B 2H6 gas phase was enhanced. The other one was dose variation by chemical treatments using SPM or diluted HF. It was found that SPM treatment reduced loss of B dose in the following annealing process while HF treatment increased it.

Original languageEnglish
Pages439-444
Number of pages6
StatePublished - 2004
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 18 Oct 200421 Oct 2004

Conference

Conference2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period18/10/0421/10/04

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