Phenomena affecting dose control of plasma doping processes for fabrication of ultra shallow junctions were investigated. One was doping from neutral gas species during plasma doping, which was revealed by the experiment of plasma pre-treatment followed by gas phase doping of B. It was found that Ar or He plasma activated Si surface so that introduction of B from neutral B 2H6 gas phase was enhanced. The other one was dose variation by chemical treatments using SPM or diluted HF. It was found that SPM treatment reduced loss of B dose in the following annealing process while HF treatment increased it.
|Number of pages||6|
|State||Published - 2004|
|Event||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China|
Duration: 18 Oct 2004 → 21 Oct 2004
|Conference||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004|
|Period||18/10/04 → 21/10/04|