Effects of substrate orientation, pseudomorphic growth and superlattice on alloy scattering in modulation doped GaInAs

Albert Chin*, T. Y. Chang, A. Ourmazd, E. M. Monberg, A. M. Chang, C. Kurdak

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The possibility of reducing alloy scattering in MBE Ga1-xInxAs has been studied experimentally by growing modulation doped heterostructures (A) with an InAs/GaInAs superlattice 2DEG channel, (B) on a vicinal (110) InP substrate, and (C) with a strain compensated pseudomorphic channel. The maximum 77 K mobility obtained in each case is (A) 60,600, (B) 69,300, and (C) 123,100 cm2/V⋯s, using x=0.50, 0.53, and 0.80, respectively. Partial alloy ordering is observed in case (B). Cyclotron resonance measurements indicate that the reduction of m* contributes much less to the enhancement of mobility in case (C) than the alloy composition factor x(1-x). Alloy ordering may also be important.

Original languageEnglish
Pages (from-to)466-469
Number of pages4
JournalJournal of Crystal Growth
Volume111
Issue number1-4
DOIs
StatePublished - 2 May 1991

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