Effects of substrate orientation on the photovoltaic performance of InGaAs solar cells

Ming Chun Tseng*, Ray-Hua Horng, Snin Nan Lin, Dong Sing Wuu, Chih Hung Wu, Chih Kang Chao, Hsin Her Yu

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

In0.16Ga0.84As solar cells grown on GaAs substrates with different miscut angles via metalorganic chemical vapor deposition were utilized to study the effect of substrate orientation on solar cell efficiency. A p-n In0.16Ga0.84As solar cell grown on a 2°-off GaAs substrate exhibited better conversion efficiency than one grown on a 15°-off GaAs substrate. The poor performance of the 15°-off In 0.16Ga0.84As solar cell could be attributed to the formation of high-density misfit dislocations through strain relaxation, thereby reducing the minority carrier lifetime. The conversion efficiency of a 15°-off In0.16Ga0.84As solar cell was improved using a p-i-n structure. Using the p-i-n structure design, a 15°-off In 0.16Ga0.84As solar cell showed conversion efficiency close to or even better than that of a 2°-off In0.16Ga 0.84As solar cell with the same structure.

Original languageEnglish
Article number5508385
Pages (from-to)2138-2143
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume57
Issue number9
DOIs
StatePublished - 1 Sep 2010

Keywords

  • InGaAs solar cells
  • miscut angles
  • p-i-n structure

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