Effects of substrate orientation on photovoltaic performance of InGaAs solar cells

Ming Chun Tseng*, Ray-Hua Horng, Yu Li Tsai, Snin Nan Lin, Dong Sing Wuu, Chih Hung Wu, Chih Kang Chao, Hsin Her Yu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

To investigate substrate orientation effect on the solar cell efficiency, In 0.16 Ga 0.84 As solar cells were grown on GaAs substrates with different miscut angles by metalorganic chemical vapor deposition. It was found that a p-n In 0.16 Ga 0.84 As solar cell grown on a 2°-off GaAs substrate exhibits better conversion efficiency than that grown on a 15°-off GaAs substrate. The poor performance of the 15°-off In 0.16 Ga 0.84 As solar cell could be attributed to the formation of high-density misfit dislocations through strain relaxation, which reduces minority carrier lifetime. The conversion efficiency of a 15°-off In 0.16 Ga 0.84 As solar cell could be improved by using a p-i-n structure. With the employment of the p-i-n structure design, a 15°-off In 0.16 Ga 0.84 As solar cell was demonstrated to show the conversion efficiency close to or even better than that of a 2°-off In 0.16 Ga 0.84 As solar cell with the same structure.

Original languageEnglish
Title of host publicationPhotovoltaics for the 21st Century 5
Pages79-86
Number of pages8
Edition15
DOIs
StatePublished - 1 Dec 2010
EventPhotovoltaics for the 21 Century 5 - 216th ECS Meeting - Vienna, Austria
Duration: 4 Oct 20099 Oct 2009

Publication series

NameECS Transactions
Number15
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferencePhotovoltaics for the 21 Century 5 - 216th ECS Meeting
CountryAustria
CityVienna
Period4/10/099/10/09

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