The growth kinetics of platinum silicides have been studied on four substrate categories: single-crystal, amorphous, undoped polycrystalline, and phosphorus-doped (8×10 20 at./cm 3 ) polycrystalline silicon. The sequential growth of Pt 2 Si and PtSi were analyzed by Rutherford backscattering spectroscopy (RBS), Seeman-Bohlin x-ray diffraction, and cross-section transmission electron microscopy. Phosphorus depth profiles were measured by secondary ion mass spectroscopy (SIMS). Our results conclude that the activation energies for the growth of Pt 2 Si and PtSi are not affected by substrate crystallinity and doping of phosphorus. Analysis of the phosphorus profile by SIMS clearly showed that phosphorus atoms are segregated near the interface between PtSi and polycrystalline silicon, but not at the Pt 2 Si/polycrystalline silicon interface.