Effects of spacer thickness on optical properties of stacked Ge/Si quantum dots grown by chemical vapor deposition

Wen-Hao Chang*, Wen Yen Chen, An Tai Chou, Tzu Min Hsu, Pan Shiu Chen, Zingway Pei, Li Shyue Lai

*Corresponding author for this work

Research output: Contribution to journalArticle

31 Scopus citations

Abstract

The paper presented the photoluminescence investigations on stacked Ge/Si quantum dots with different spacer thickness. Strain relaxation for a thinner spacer was achieved by transferring strain into spacers and by material intermixing. It was found that although reducing the spacer thickness may provide better confinement for the electron in the Si conduction band, the predominant material intermixing tends to counteract this effect and degrades the interface sharpness of the dots.

Original languageEnglish
Pages (from-to)4999-5002
Number of pages4
JournalJournal of Applied Physics
Volume93
Issue number9
DOIs
StatePublished - 1 May 2003

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