Effects of size and shape of lateral confinement on the formation of NiSi2, CoSi2, and TiSi2 on silicon inside miniature size oxide openings

L. J. Chen*, J. Y. Yew, S. L. Cheng, K. M. Chen, K. Nakamura, Bing-Yue Tsui

*Corresponding author for this work

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

The effects of size and shape of lateral confinement on the formation of NiSi2, CoSi2 and TiSi2 on silicon inside miniature size oxide openings have been investigated. Epitaxial growth of NiSi2 of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside both contact holes and linear openings of 0.3 μm or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi2 of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2 on (111)Si are correlated with the stress level inside oxide openings. The faceting of CoSi2 was found to occur at a lower temperature inside oxide openings of smaller size. C49-C54 TiSi2 transformation was observed to be more difficult on both blank and BF2+ implanted (001)Si inside smaller size oxide openings.

Original languageEnglish
Pages (from-to)499-504
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume427
StatePublished - 1 Dec 1996
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 8 Apr 199611 Apr 1996

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