Effects of sensitivity enhancement by oxide passivation layer on SGOI nanowire fabrication

Chu Feng Chen*, Kow-Ming Chang, Yu Bin Wang, Chung Hsien Liu, Chin Ning Wu, Cheng Ting Hsieh, Chiung Hui Lai, Kuo Chin Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Increasing the fraction of Ge in SiGe-on-Insulator (SGOI) using Ge condensation by oxidation significantly increases hole mobility. This effect can be exploited to improve the sensitivity of SGOI nanowire. However, our previous studies found that the sensitivity of an SGOI nanowire is degraded as the Ge fraction increases over 20%, because of the surface state of SiGe is unstable when the Ge fraction is high. In this work, a top surface passtivation SiO 2 layer was deposited on an Si 0.8Ge 0.2 nanowire and successfully improve its sensitivity around 2.5 times that of the nanowire sample without top a passivation layer.

Original languageEnglish
Title of host publicationIMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai
Pages162-163
Number of pages2
DOIs
StatePublished - 30 Jul 2012
Event10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012 - Osaka, Japan
Duration: 9 May 201211 May 2012

Publication series

NameIMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai

Conference

Conference10th International Meeting for Future of Electron Devices, Kansai, IMFEDK 2012
CountryJapan
CityOsaka
Period9/05/1211/05/12

Keywords

  • Bisosensor
  • Ge-condendation
  • Nanowire
  • SiGe

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