Effects of RCA clean-up procedures on the formation of roughened poly-Si electrodes for high-density DRAMs' capacitors

Han Wen Liu*, Wen Koi Lai, Swei Yang Yu, Stewart C. Huang, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

A novel structure, the phosphorus-implanted poly-Si films treated with phosphoric acid (H3PO4) and cleaned by standard RCA cleanup procedures, has been demonstrated as the bottom electrodes of DRAMs' stacked capacitors. After the H3PO4 treatment and RCA cleaning process, micro-island structures are formed on the poly-Si surface of the storage electrodes. The NH4OH + H2O2 + H2O (SC-1) solution in the RCA cleaning procedures is the main component to change the porous surfaces and engraved structures, formed by H3PO4 treatment, into micro-islands. Although the electrical properties are slightly degraded compared to the control samples, but they fulfill the requirements of high-density DRAMs, resulting from the increment of cell capacitance.

Original languageEnglish
Pages (from-to)195-198
Number of pages4
JournalMaterials Chemistry and Physics
Volume51
Issue number2
DOIs
StatePublished - 1 Jan 1997

Keywords

  • High-density Drams' capacitors
  • Poly-Si electrodes
  • RCA clean-up procedures

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