Effects of RCA clean-up procedures on the formation of roughened poly-Si electrodes for high-density DRAMs' capacitors

Han Wen Liu; Wen Koi Lai; Swei Yang Yu; Stewart C. Huang; Huang-Chung Cheng

doi:10.1016/S0254-0584(97)80294-5

Effects of RCA clean-up procedures on the formation of roughened poly-Si electrodes for high-density DRAMs' capacitors

Han Wen Liu^*, Wen Koi Lai, Swei Yang Yu, Stewart C. Huang, Huang-Chung Cheng

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article

6 Scopus citations

Abstract

A novel structure, the phosphorus-implanted poly-Si films treated with phosphoric acid (H₃PO₄) and cleaned by standard RCA cleanup procedures, has been demonstrated as the bottom electrodes of DRAMs' stacked capacitors. After the H₃PO₄ treatment and RCA cleaning process, micro-island structures are formed on the poly-Si surface of the storage electrodes. The NH₄OH + H₂O₂ + H₂O (SC-1) solution in the RCA cleaning procedures is the main component to change the porous surfaces and engraved structures, formed by H₃PO₄ treatment, into micro-islands. Although the electrical properties are slightly degraded compared to the control samples, but they fulfill the requirements of high-density DRAMs, resulting from the increment of cell capacitance.

Original language	English
Pages (from-to)	195-198
Number of pages	4
Journal	Materials Chemistry and Physics
Volume	51
Issue number	2
DOIs	https://doi.org/10.1016/S0254-0584(97)80294-5
State	Published - 1 Jan 1997

Keywords

High-density Drams' capacitors
Poly-Si electrodes
RCA clean-up procedures

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Liu, H. W., Lai, W. K., Yu, S. Y., Huang, S. C., & Cheng, H-C. (1997). Effects of RCA clean-up procedures on the formation of roughened poly-Si electrodes for high-density DRAMs' capacitors. Materials Chemistry and Physics, 51(2), 195-198. https://doi.org/10.1016/S0254-0584(97)80294-5

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title = "Effects of RCA clean-up procedures on the formation of roughened poly-Si electrodes for high-density DRAMs' capacitors",

abstract = "A novel structure, the phosphorus-implanted poly-Si films treated with phosphoric acid (H3PO4) and cleaned by standard RCA cleanup procedures, has been demonstrated as the bottom electrodes of DRAMs' stacked capacitors. After the H3PO4 treatment and RCA cleaning process, micro-island structures are formed on the poly-Si surface of the storage electrodes. The NH4OH + H2O2 + H2O (SC-1) solution in the RCA cleaning procedures is the main component to change the porous surfaces and engraved structures, formed by H3PO4 treatment, into micro-islands. Although the electrical properties are slightly degraded compared to the control samples, but they fulfill the requirements of high-density DRAMs, resulting from the increment of cell capacitance.",

keywords = "High-density Drams' capacitors, Poly-Si electrodes, RCA clean-up procedures",

author = "Liu, {Han Wen} and Lai, {Wen Koi} and Yu, {Swei Yang} and Huang, {Stewart C.} and Huang-Chung Cheng",

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AU - Lai, Wen Koi

AU - Yu, Swei Yang

AU - Huang, Stewart C.

AU - Cheng, Huang-Chung

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AB - A novel structure, the phosphorus-implanted poly-Si films treated with phosphoric acid (H3PO4) and cleaned by standard RCA cleanup procedures, has been demonstrated as the bottom electrodes of DRAMs' stacked capacitors. After the H3PO4 treatment and RCA cleaning process, micro-island structures are formed on the poly-Si surface of the storage electrodes. The NH4OH + H2O2 + H2O (SC-1) solution in the RCA cleaning procedures is the main component to change the porous surfaces and engraved structures, formed by H3PO4 treatment, into micro-islands. Although the electrical properties are slightly degraded compared to the control samples, but they fulfill the requirements of high-density DRAMs, resulting from the increment of cell capacitance.

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