Effects of rapid thermal annealing on the formation of shallow p +n junction by implanting BF2+ ions into thin metal films on Si substrate. I. Thin titanium films

M. H. Juang*, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

High-quality Ti-silicided shallow p+n junctions have been fabricated by implanting BF+2 ions into thin Ti films on Si substrate and subsequent silicidation/drive-in by rapid thermal annealing (RTA) or conventional furnace annealing (CFA) under proper implant and anneal conditions. For both the RTA and CFA techniques, annealing temperatures higher than 800°C degrade the junction formation because of more severe dopant confinement within the silicides and more serious diffusion of knock-on Ti into junction regions. The high-dose implant greatly enhanced the dopant activation and thus improved the junctions. The high heating rate for RTA caused an immediate formation of Ti-B compounds at high temperatures, while CFA considerably promoted the drive-in efficiency because of its low heating rates and long annealing times. Hence, CFA yielded better low-bias rectifying characteristics than RTA due to larger dopant activation. However, CFA caused much worse high reverse-bias characteristics. A rapid increase of reverse currents with bias voltage was observed for the CFA-treated samples, indicating a severe Ti penetration due to long annealing times.

Original languageEnglish
Pages (from-to)1265-1270
Number of pages6
JournalJournal of Applied Physics
Volume71
Issue number3
DOIs
StatePublished - 1 Dec 1992

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