Effects of random work function fluctuations in nanoszied metal grains on electrical characteristic of 16 nm high-κ/metal gate bulk FinFETs

Hui Wen Cheng*, Yung Yueh Chiu, Yiming Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, the work function fluctuation (WKF) induced variability in 16-nm-gate planar MOSFET and bulk FinFET is for the first time explored and compared. Based upon an experimentally calibrated 3D device simulation, the newly developed localized WKF (LWKF) simulation technique enables us to estimate the threshold voltage and DC baseband fluctuations of devices which accounts for the random grain's number and position effects simultaneously. The results show that the random work function, resulting from local nanosized metal grains in bulk FinFET, induced relatively small threshold voltage (Vth) fluctuation (about 2.5 times lower), compared with the result of planar device.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Pages30-33
Number of pages4
StatePublished - 2011
EventNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 - Boston, MA, United States
Duration: 13 Jun 201116 Jun 2011

Publication series

NameTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Volume2

Conference

ConferenceNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
CountryUnited States
CityBoston, MA
Period13/06/1116/06/11

Keywords

  • 3D device simulation
  • Current distribution
  • High-κ/metal gate
  • Localized work function fluctuation simulation technqiue
  • On/Off state current fluctuation
  • Potential profile
  • Threshold voltage fluctuation
  • Work function fluctuation

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