Effects of Process and Gate Doping Species on Negative-Bias-Temperature Instability of p-Channel MOSFETs

Da Yuan Lee*, Tiao Yuan Huang, Horng-Chih Lin, Wan Ju Chiang, Guo Wei Huang, Ta-Hui Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The effects of poly-Si gate doping type and species as well as thermal treatments on negative-bias-temperature instability (NBTI) of p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) were investigated. We found that devices with n+-poly-Si gate depict a smaller threshold voltage shift after bias-temperature stressing, compared to their p+-poly-Si-gated counterparts. By carefully controlling the thermal budget to suppress boron penetration, NBTI can be reduced by fluorine incorporation in p+-poly-Si-gated devices. Finally, NBTI is found to be aggravated in devices subjected to H2 postmetalannealing, highlighting the important role of hydrogen bonds.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume151
Issue number2
DOIs
StatePublished - 4 Mar 2004

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