Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology

Po-Tsun Liu*, Chen Shuo Huang, Yi Ling Huang, Jing Ru Lin, Szu Lin Cheng, Yoshio Nishi, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO 2 /germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO 2 /Ge interface at 150 °C. A smooth interfacial GeO 2 layer between gate SiO 2 and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 °C can be restored to a extent similar to the initial state.

Original languageEnglish
Article number112902
JournalApplied Physics Letters
Volume96
Issue number11
DOIs
StatePublished - 26 Mar 2010

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