Effects of postetching treatments on electrical characteristics of -thermal oxides on reactive-ion-etched silicon substrates

Huang-Chung Cheng, Shih Yuan Ueng, Ping Wei Wang, Tzong Kuei Kang, Tien-Sheng Chao

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Thin oxides thermally grown on the reactive-ion-etched (RIE) silicon substrates in N2О and diluted O2 ambients have been studied. The RIE will strongly affect the silicon surface microroughness and lead to poor oxides properties. Using the after-treatment-chamber (АТС) process, CF4 addition in the O2 plasma can further improve the time-zero-to-dielectric-breakdown (TZDB) characteristics of the thin oxides as compared with pure O2 plasma. This is because CF4 addition in the АТС can remove the damaged silicon layer and smooth the silicon surface since the O2 plasma can effectively only strip the polymeric layer. In addition, the N20-grown oxides can enlarge the process window of the CF4/O2 АТС treatments with respect to pure oxides.

Original languageEnglish
Pages (from-to)5037-5042
Number of pages6
JournalJapanese Journal of Applied Physics
Volume34
Issue number9R
DOIs
StatePublished - 1 Jan 1995

Keywords

  • Etching damage
  • Interface microrough ness
  • Postetching treatment
  • Reactive ion etching
  • Silicon dioxide
  • TZDB

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