Effects of postdeposition annealing on the dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films derived from pulsed laser deposition

Yingbang Yao, S. G. Lu, H. D. Chen*, K. H. Wong

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Lanthanum-doped lead zirconate stannate titanate antiferroelectric thin films were deposited onto Pt-buffered silicon substrates using the pulsed laser deposition method. The deposition temperature was 570°C. The postdeposition annealing process was carried out in an oxygen-flow tube furnace at temperatures ranging from 650 to 800°C for a duration of 30 min; its effects were studied through the variations of the microstructure as well as the electrical and dielectric properties. It was found that an appropriate annealing process at temperatures above 700°C could substantially improve the dielectric properties. However, annealing beyond 800°C caused the film properties to deteriorate severely. Explanations were given with regard to the microstructure-property relationship.

Original languageEnglish
Pages (from-to)5830-5835
Number of pages6
JournalJournal of Applied Physics
Volume96
Issue number10
DOIs
StatePublished - 15 Nov 2004

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