Effects of post-treatment for low dielectric hydrogen silsesquioxane (HSQ)

T. C. Chang*, Po-Tsun Liu, M. F. Chou, M. S. Tsai, S. M. Sze, C. Y. Chang, F. Y. Shih, H. D. Huang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Low density materials, such as hydrogen silsesquioxane (HSQ), can offer lower dielectric constants. With HSQ, a low value of K can be achieved if the density of Si-H bonding is maintained at a high level. However, the quality of HSQ films are degraded by the damage of oxygen plasma and hygroscopic behavior during photoresist stripping. In addition, the thermal stability of as-cured HSQ films are about 400°C. Both leakage current and dielectric constant of HSQ films rapidly increase with increasing annealing temperature. In this work, we have studied the use of hydrogen plasma to improve the quality of HSQ. The leakage current of HSQ decreases as the H 2 plasma treatment time is increased. The role of hydrogen plasma is to passivate the surface of porous HSQ. In addition, the enhancement of the thermal stability of the HSQ film by fluorine ion implantation treatment was investigated. The implantation step can reduce the leakage current of HSQ with high annealing temperature. The enhancement of thermal stability of the HSQ film is due to the film densification by ion implantation treatment.

Original languageEnglish
Pages (from-to)208-215
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3508
DOIs
StatePublished - 1 Dec 1998
EventMultilevel Interconnect Technology II - Santa Clara, CA, United States
Duration: 23 Sep 199824 Sep 1998

Keywords

  • Fluorine ion implantation
  • HSQ
  • Hydrogen plasma
  • Hygroscopic

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