Effects of post dielectric deposition and post metallization annealing processes on metal/Dy2O3/Si(100) diode characteristics

Shun Ichiro Ohmi; Hiroyuki Yamamoto; Junichi Taguchi; Kazuo Tsutsui; Hiroshi Iwai

doi:10.1143/JJAP.43.1873

Effects of post dielectric deposition and post metallization annealing processes on metal/Dy₂O₃/Si(100) diode characteristics

Shun Ichiro Ohmi^*, Hiroyuki Yamamoto, Junichi Taguchi, Kazuo Tsutsui, Hiroshi Iwai

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Ultra-high vacuum annealing was investigated for Dy₂O ₃ films deposited on Si(100) substrates. The leakage current of the Dy₂O₃ films deposited at room temperature (RT) was found to be decreased without any increase of the equivalent oxide thickness (EOT) by the in-situ vacuum annealing method compared to that of the conventional rapid thermal annealing (RTA) in O₂. The negative flat-band voltage (V _FB) shift observed after the in-situ vacuum annealing process was suppressed by increasing the deposition temperature of Dy₂O ₃ on chemically oxidized Si from RT to 250°C. The EOT of 1.1 nm with the leakage current of 0.29 A/cm² (@V_FB + 1V) was obtained for the Dy₂O₃ film after the air-brake and vacuum annealing, and the EOT of 0.63 nm with 4 A/cm² (@V_FB + 1V) was achieved for the Dy₂O₃ film with the TaN gate electrode after the post metallization annealing (PMA).

Original language	English
Pages (from-to)	1873-1878
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.43.1873
State	Published - Apr 2004

Keywords

DyO
E-beam
High-k
Rare earth oxide
TaN
Vacuum annealing

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@article{a56fc5d8d61243bead7487a0f8301d64,

title = "Effects of post dielectric deposition and post metallization annealing processes on metal/Dy2O3/Si(100) diode characteristics",

abstract = "Ultra-high vacuum annealing was investigated for Dy2O 3 films deposited on Si(100) substrates. The leakage current of the Dy2O3 films deposited at room temperature (RT) was found to be decreased without any increase of the equivalent oxide thickness (EOT) by the in-situ vacuum annealing method compared to that of the conventional rapid thermal annealing (RTA) in O2. The negative flat-band voltage (V FB) shift observed after the in-situ vacuum annealing process was suppressed by increasing the deposition temperature of Dy2O 3 on chemically oxidized Si from RT to 250°C. The EOT of 1.1 nm with the leakage current of 0.29 A/cm2 (@VFB + 1V) was obtained for the Dy2O3 film after the air-brake and vacuum annealing, and the EOT of 0.63 nm with 4 A/cm2 (@VFB + 1V) was achieved for the Dy2O3 film with the TaN gate electrode after the post metallization annealing (PMA).",

keywords = "DyO, E-beam, High-k, Rare earth oxide, TaN, Vacuum annealing",

author = "Ohmi, {Shun Ichiro} and Hiroyuki Yamamoto and Junichi Taguchi and Kazuo Tsutsui and Hiroshi Iwai",

year = "2004",

month = apr,

doi = "10.1143/JJAP.43.1873",

language = "English",

volume = "43",

pages = "1873--1878",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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}

Effects of post dielectric deposition and post metallization annealing processes on metal/Dy₂O₃/Si(100) diode characteristics. / Ohmi, Shun Ichiro; Yamamoto, Hiroyuki; Taguchi, Junichi; Tsutsui, Kazuo; Iwai, Hiroshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 4 B, 04.2004, p. 1873-1878.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effects of post dielectric deposition and post metallization annealing processes on metal/Dy2O3/Si(100) diode characteristics

AU - Ohmi, Shun Ichiro

AU - Yamamoto, Hiroyuki

AU - Taguchi, Junichi

AU - Tsutsui, Kazuo

AU - Iwai, Hiroshi

PY - 2004/4

Y1 - 2004/4

N2 - Ultra-high vacuum annealing was investigated for Dy2O 3 films deposited on Si(100) substrates. The leakage current of the Dy2O3 films deposited at room temperature (RT) was found to be decreased without any increase of the equivalent oxide thickness (EOT) by the in-situ vacuum annealing method compared to that of the conventional rapid thermal annealing (RTA) in O2. The negative flat-band voltage (V FB) shift observed after the in-situ vacuum annealing process was suppressed by increasing the deposition temperature of Dy2O 3 on chemically oxidized Si from RT to 250°C. The EOT of 1.1 nm with the leakage current of 0.29 A/cm2 (@VFB + 1V) was obtained for the Dy2O3 film after the air-brake and vacuum annealing, and the EOT of 0.63 nm with 4 A/cm2 (@VFB + 1V) was achieved for the Dy2O3 film with the TaN gate electrode after the post metallization annealing (PMA).

AB - Ultra-high vacuum annealing was investigated for Dy2O 3 films deposited on Si(100) substrates. The leakage current of the Dy2O3 films deposited at room temperature (RT) was found to be decreased without any increase of the equivalent oxide thickness (EOT) by the in-situ vacuum annealing method compared to that of the conventional rapid thermal annealing (RTA) in O2. The negative flat-band voltage (V FB) shift observed after the in-situ vacuum annealing process was suppressed by increasing the deposition temperature of Dy2O 3 on chemically oxidized Si from RT to 250°C. The EOT of 1.1 nm with the leakage current of 0.29 A/cm2 (@VFB + 1V) was obtained for the Dy2O3 film after the air-brake and vacuum annealing, and the EOT of 0.63 nm with 4 A/cm2 (@VFB + 1V) was achieved for the Dy2O3 film with the TaN gate electrode after the post metallization annealing (PMA).

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KW - Rare earth oxide

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