Effects of post dielectric deposition and post metallization annealing processes on metal/Dy2O3/Si(100) diode characteristics

Shun Ichiro Ohmi*, Hiroyuki Yamamoto, Junichi Taguchi, Kazuo Tsutsui, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

Ultra-high vacuum annealing was investigated for Dy2O 3 films deposited on Si(100) substrates. The leakage current of the Dy2O3 films deposited at room temperature (RT) was found to be decreased without any increase of the equivalent oxide thickness (EOT) by the in-situ vacuum annealing method compared to that of the conventional rapid thermal annealing (RTA) in O2. The negative flat-band voltage (V FB) shift observed after the in-situ vacuum annealing process was suppressed by increasing the deposition temperature of Dy2O 3 on chemically oxidized Si from RT to 250°C. The EOT of 1.1 nm with the leakage current of 0.29 A/cm2 (@VFB + 1V) was obtained for the Dy2O3 film after the air-brake and vacuum annealing, and the EOT of 0.63 nm with 4 A/cm2 (@VFB + 1V) was achieved for the Dy2O3 film with the TaN gate electrode after the post metallization annealing (PMA).

Original languageEnglish
Pages (from-to)1873-1878
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number4 B
DOIs
StatePublished - Apr 2004

Keywords

  • DyO
  • E-beam
  • High-k
  • Rare earth oxide
  • TaN
  • Vacuum annealing

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