Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides

Chi Chun Chen, Horng-Chih Lin, Chun Yen Chang, Tiao Yuan Huang, Chao-Hsin Chien, Mong Song Liang

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Effects of poly-gate doping concentration on plasma charging damage in ultrathin gate oxides were investigated. While the charge-to-breakdown (Q bd ) value under gate injection stress polarity (-V g ) is independent of the doping concentration, Q bd under substrate injection stress polarity (+V g ) shows a noticeable improvement with increasing doping concentration. However, our results show that plasma-induced oxide degradation is actually aggravated with increasing poly-gate doping concentration. These seemingly inconsistent observations can be explained by the lowering of plasma charging potential in the case of insufficient poly-gate doping.

Original languageEnglish
Pages (from-to)103-105
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume3
Issue number2
DOIs
StatePublished - 1 Feb 2000

Fingerprint Dive into the research topics of 'Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides'. Together they form a unique fingerprint.

  • Cite this