Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs

C. W. Lin*, M. Z. Yang, C. C. Yeh, L. J. Cheng, T. Y. Huang, Huang-Chung Cheng, Horng-Chih Lin, Tien-Sheng Chao, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to journalConference article

21 Scopus citations

Abstract

A complete performance and reliability study on effects of different plasma treatments (NH 3 and N 2 O), substrate types (oxidized silicon wafer and quartz), and crystallization methods (excimer laser annealing and solid phase crystallization) of low temperature polysilicon (LTPS, <600°C) TFTs are reported. It is shown that devices made by different fabrication methods exhibit different degradation behaviors under various stressing conditions.

Original languageEnglish
Pages (from-to)305-308
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1999
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 5 Dec 19998 Dec 1999

Fingerprint Dive into the research topics of 'Effects of plasma treatments, substrate types, and crystallization methods on performance and reliability of low temperature polysilicon TFTs'. Together they form a unique fingerprint.

  • Cite this