Effects of plasma damage on metal-insulator-metal capacitors and transistors for advanced mixed-signal/radio-frequency metal-oxide-semiconductor field-effect transistor technology

Wu Te Weng*, Yao Jen Lee, Horng-Chih Lin, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

The effects of damage on mixed-signal (MS)/radio-frequency (RF) circuits integrated with metal-insulator-metal (MIM) capacitors and advanced metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied in this work. The impact of damage on an MIM oxide is evaluated by connecting its capacitor top metal (CTM) to an upper-level metal with a large antenna ratio (ARCTM) used in an actual CTM circuit connected to an interconnect. In addition to the dielectric degradation of a transistor, we also investigate the damage-enhanced negative bias temperature instability (NBTI) degradation of a transistor with its gate electrode connected to an MIM capacitor with a large ARCTM for various gate oxide thicknesses. A model is proposed to explain the experimentally observed dependence of NBTI degradation on AR CTM and accurately simulate failure distributions in the presence of plasma damage.

Original languageEnglish
Pages (from-to)860011-860017
Number of pages7
JournalJapanese Journal of Applied Physics
Volume48
Issue number8 Part 1
DOIs
StatePublished - 1 Dec 2009

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