Effects of parasitic MOSFETs and traps on charge transport properties of germanium quantum dot single electron/hole transistors

W. T. Lai, W. M. Liao, M. T.David Kuo, P. W. Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ge quantum-dot (QD) single electron and single hole transistors (SETs/SHTs) have be experimentally fabricated with Ge QDs formed by selective oxidation of Si0.95Ge0.05/Si-on-insulator nanowires. The turn-on voltages of Ge QD SETs/SHTs could be modulated by adjusting the top Si layer thickness or applying back gate biases due to parasitic MOSFETs effect. In addition to quantum confinement and coulomb charging effects, drain current hysteresis memory effects have also been observed both in SETs and SHTs at room temperature. The charge storage in the Ge QD SET and SHT might be attributed to the traps at the internal/surface of Ge QDs and the interface states between SiO2 and Si.

Original languageEnglish
Title of host publication2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages27-30
Number of pages4
ISBN (Print)0780393392, 9780780393394
DOIs
StatePublished - 1 Jan 2005
Event2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
Duration: 19 Dec 200521 Dec 2005

Publication series

Name2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Conference

Conference2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryHong Kong
CityHowloon
Period19/12/0521/12/05

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    Lai, W. T., Liao, W. M., Kuo, M. T. D., & Li, P. W. (2005). Effects of parasitic MOSFETs and traps on charge transport properties of germanium quantum dot single electron/hole transistors. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 27-30). [1635197] (2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2005.1635197