Effects of oxygen plasma ashing on barrier dielectric SiCN film

C. W. Chen*, T. C. Chang, Po-Tsun Liu, T. M. Tsai, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Effects of oxygen plasma ashing on barrier dielectric SiCN films have been studied for various ashing conditions. According to X-ray photoelectron spectra analyses, Si - O2 bonds appear at the surface of SiCN film after O2 plasma ashing. The formation of the oxidized layer, SiO xCN, at the surface of the SiCN film effectively reduces the leakage current as a consequence. The leakage conduction of the SiCN films has been investigated to be Schottky emission at the fields between 0.4 and 1.2 MV/cm. Also, the increase of Schottky barrier height between SiCN and the metal is calculated to be 42 meV after O2 plasma ashing. All rights reserved.

Original languageEnglish
Pages (from-to)G11-G13
JournalElectrochemical and Solid-State Letters
Volume8
Issue number1
DOIs
StatePublished - 31 Jan 2005

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