Effects of oxygen on the growth of Ni induced lateral crystallization of amorphous silicon films

You Da Lin, Yew-Chuhg Wu*, Chi Wei Chao, Guo Ren Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Effects of oxygen on the growth of metal (Ni) induced lateral crystallization (MILC) of amorphous silicon have been investigated. It is found that the oxygen in the annealing ambient did not degrade the MILC length or growth rate. The oxygen existence in Ni film does not degrade the MILC growth rate either. However, it retards the nucleation of poly-Si for about 4h. This is because that NiO needed an incubation period to be reduced to nickel metal for the subsequent mediated crystallization of a-Si process.

Original languageEnglish
Pages (from-to)577-580
Number of pages4
JournalMaterials Chemistry and Physics
Volume80
Issue number3
DOIs
StatePublished - 26 Jun 2003

Keywords

  • Amorphous silicon
  • Metal induced lateral crystallization (MILC)
  • Nickel and nickel oxide
  • Oxygen
  • Polycrystalline silicon

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