Effects of oxygen in Ni films on Ni-induced lateral crystallization of amorphous silicon films at various temperatures

You Da Lin*, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Effects of oxygen in Ni films on the Ni-induced lateral crystallization (NILC) of amorphous silicon (a-Si) films at various temperatures have been investigated. It was found that oxygen in Ni films retarded the nucleation of polycrystalline silicon (poly-Si) from a-Si, but had little effect on the growth rate of poly-Si. This is because that needed an incubation period to be reduced to Ni metal for the subsequent mediated crystallization of a-Si.

Original languageEnglish
Pages (from-to)1708-1711
Number of pages4
JournalJournal of Electronic Materials
Volume35
Issue number9
DOIs
StatePublished - 1 Jan 2006

Keywords

  • Amorphous silicon
  • Nickel oxide
  • Nickel-induced lateral crystallization (NILC)
  • Oxygen
  • Polycrystalline silicon

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