Effects of O2- and N2O-plasma treatments on properties of plasma-enhanced-chemical-vapor-deposition tetraethylorthosilicate oxide

Ying Chia Chen*, Ming Zang Yang, I. Chung Tung, Mengpang Chen, Ming Shiann Feng, Huang-Chung Cheng, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


The high quality silicon oxide films were prepared by plasma-enhanced chemical vapor deposition (PECVD) using tetraethylorthosilicate (TEOS)-oxygen based chemistry. The O2- or N2O-plasma treatments were performed on the as-deposited films as an attempt to improve the properties of the TEOS oxide films. TEOS oxide film deposited at lower pressure had lower Si-OH content, less carbon impurity, and flatter surface, and hence had better electrical properties. Both O2- and N2O-plasma would decrease the oxygen content of the oxide film, which led the composition of the film to deviate from the stoichiometric SiO2. The O2-plasma treatment did not show the encouraging effect on the chemical structure and electrical properties of the TEOS oxide films. In contrast, the N2O-plasma treatment could be a promising means to improve the breakdown field and leakage current density of the TEOS oxide films, which was accomplished by the N2O-plasma effect to facilitate the passivation of dangling bonds, linking reaction of Si-OH bonds, nitridation reaction and densification of the amorphous silicon oxide network.

Original languageEnglish
Pages (from-to)4226-4232
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number7 B
StatePublished - 15 Jul 1999


  • Plasma treatment
  • Plasma-enhanced chemical-vapor-deposition
  • Silicon dioxide
  • TEOS
  • Tetraethylorthosilicate

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