Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions

L. W. Cheng*, S. L. Cheng, J. Y. Chen, L. J. Chen, Bing-Yue Tsui

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

36 Scopus citations

Abstract

The effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions have been investigated. The phase formation of nickel silicides on nitrogen implanted (001)Si was suppressed and shifted to a higher temperature compared to samples not implanted with nitrogen. The sheet resistance was found to be nearly constant in a wide range of temperature in nitrogen ion implanted samples. It indicates that low-resistivity NiSi is the dominant phase for the 1×1015 N+/cm2 implanted samples annealed at 400-750 °C and for the 2×1015 N2+/cm2 implanted samples annealed at 400-800 °C. The diffusion of nickel atoms is thought to be retarded by the presence of nitrogen atoms. The presence of nitrogen ion can also improve the thermal stability of nickel disilicide. The effects of nitrogen on nickel silicide formation become more pronounced with an increase in the nitrogen dose up to a certain value.

Original languageEnglish
Pages (from-to)412-416
Number of pages5
JournalThin Solid Films
Volume355
DOIs
StatePublished - 1 Nov 1999
EventProceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films - San Diego, CA, USA
Duration: 12 Apr 199915 Apr 1999

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