Effects of nitridation of silicon and repeated spike heating on the electrical properties of SrTiO3 gate dielectrics

Chih Yi Liu*, Hang Ting Lue, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Effects of nitridation of silicon and repeated spike heating on the electrical properties of SrTiO3 (STO) gate dielectrics were studied. The repeated spike heating technique was also used to deposit a STO gate dielectric at repeated oscillating temperatures. The results indicate that this thermal treatment reduced the interfacial trap states and the leakage current is also reduced by about 1 order of magnitude.

Original languageEnglish
Pages (from-to)4416-4418
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number23
DOIs
StatePublished - 2 Dec 2002

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