Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

Franky J. Lumbantoruan, Yuen Yee Wong, Wei Ching Huang, Hung Wei Yu, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

NH3 flow rate during AlGaN barrier layer growth not only affects the growth efficiency and surface morphology as a result of parasitic reactions but also influences the concentration of carbon impurity in the AlGaN barrier. Carbon, which decomposes from metal precursors, plays a role in electron compensation for AlGaN/GaN HEMT. No 2-dimensional electron gas (2-DEG) was detected in the AlGaN/GaN structure if grown with 0.5 slm of NH3 due to the presence of higher carbon impurity (2.6 × 1019 cm−2). When the NH3 flow rate increased to 6.0 slm, the carbon impurity reduced to 2.10 × 1018 atom cm−3 and the 2 DEG electron density recovered to 9.57 × 1012 cm−2.

Original languageEnglish
Pages (from-to)6104-6110
Number of pages7
JournalJournal of Electronic Materials
Volume46
Issue number10
DOIs
StatePublished - 1 Oct 2017

Keywords

  • 2 DEG properties
  • AlGaN barrier layer
  • AlGaN/GaN HEMT
  • carbon
  • donor compensation
  • NH flow

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