Effects of negative-gate-bias with illumination stress on the hysteresis in the transfer curve of a-IGZO TFT Measured by the new sampling method

Yi Jung Chen, Zong Hua Cai, Ya-Hsiang Tai, Chun Yi Chang, Chien Ju Li, Yung Hui Yen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In the study, the hysteresis in the transfer curve of a-IGZO TFTs with bias stress and illumination is analyzed. The threshold voltage difference between the two curves in the hysteresis keeps the same, even the threshold voltages shift severely with stress time. The difference increases with the light intensity.

Original languageEnglish
Title of host publication21st International Display Workshops 2014, IDW 2014
PublisherSociety for Information Display
Pages295-298
Number of pages4
ISBN (Electronic)9781510827790
StatePublished - 1 Jan 2014
Event21st International Display Workshops 2014, IDW 2014 - Niigata, Japan
Duration: 3 Dec 20145 Dec 2014

Publication series

Name21st International Display Workshops 2014, IDW 2014
Volume1

Conference

Conference21st International Display Workshops 2014, IDW 2014
CountryJapan
CityNiigata
Period3/12/145/12/14

Keywords

  • A-IGZO Thin Film Transistor
  • Hysteresis
  • NBIS

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