Effects of N20 Anneal and Reoxidation on Thermal Oxide Characteristics

Zhihong Liu, Hsing Jen Wann, Chen-Ming Hu, Ping Ko, Yiu Chung Cheng

Research output: Contribution to journalArticle

62 Scopus citations

Abstract

The effects of post-oxidation N2O anneal on conventional thermal oxide are studied. The oxide thickness increase resulting from N2O anneal is found to be self-limiting and insensitive to initial oxide thickness, which makes the thickness of the resulting oxide easy to control. The N2O anneal leads to increased resistance against injection-induced interface-state generation and to reduced hole trapping. No further quality improvement is found when the N2O-annealed oxide is subject to an additional reoxidation. This finding confirms that nitrogen incorporation in the absence of hydrogen is responsible for improving the quality of the conventional oxides.

Original languageEnglish
Pages (from-to)402-404
Number of pages3
JournalIEEE Electron Device Letters
Volume13
Issue number8
DOIs
StatePublished - 1 Jan 1992

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