Effects of N 2 O-annealed sacrificial oxide on the short-channel effects of nMOSFETs

F. C. Jong*, T. Y. Huang, Tien-Sheng Chao, Horng-Chih Lin, M. F. Wang, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The authors report the effects of N 2 O-annealed sacrificial oxide on nMOSFETs. It is demonstrated that by adding an N 2 0-annealing step to the sacrificial oxide which was stripped off before growing the final gate oxide, the reverse short-channel effects (RSCE) can still be effectively suppressed.

Original languageEnglish
Pages (from-to)404-406
Number of pages3
JournalElectronics Letters
Volume34
Issue number4
DOIs
StatePublished - 19 Feb 1998

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