Effects of microwave annealing on nitrogenated amorphous in-Ga-Zn-O thin-film transistor for low thermal budget process application

Chur Shyang Fuh, Po-Tsun Liu, Li Feng Teng, Sih Wei Huang, Yao Jen Lee, Han Ping D. Shieh, Simon M. Sze

Research output: Contribution to journalArticlepeer-review

45 Scopus citations

Abstract

In this letter, microwave annealing technology is proposed to reduce thermal budget for the manufacture of transparent conductive oxide thin-film transistor (TFT). With microwave annealing, a nitrogenated amorphous In-Ga-Zn-O (a-IGZO:N) TFT fabricated on glass panel behaves as a carrier mobility of 4.21 cm 2 V s and threshold voltage of 2.91 V. The performance of microwave-treated a-IGZO:N TFT with annealing process duration of 300 s is well competitive with its counterpart treated by thermal furnace annealing at 350 C for 1 h. Owing to its low thermal budget and selective heating to materials of interest, the microwave annealing has great potential for flexible oxide TFT applications.

Original languageEnglish
Article number6564440
Pages (from-to)1157-1159
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number9
DOIs
StatePublished - Sep 2013

Keywords

  • Flexible thin-film transistor (TFT)
  • In-Ga-Zn-O thin-film transistor (IGZO TFT)
  • postannealing

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