Effects of metallic contaminants on the electrical characteristics of ultrathin gate oxides

Tung Ming Pan*, Fu-Hsiang Ko, Tien-Sheng Chao, Chieh Chuang Chen, Kuei Shu Chang-Liao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

In this paper, we describe the effects that five metallic contaminants have on the electrical property of an ultrathin gate oxide. We found that, among five metallic contaminants, Fe and Ni resulted in the lowest electric breakdown fields (Ebd) and charge-to-breakdown ratios (Qbd) and the highest leakage currents and interface state densities (Dit). On the other hand, Ca-contaminated devices exhibit a lower leakage current and D it and a higher Qbd than did the other metals.

Original languageEnglish
Pages (from-to)G201-G203
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume8
Issue number8
DOIs
StatePublished - 14 Sep 2005

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