Effects of metal layer insertion on EOT scaling in TiN/Metal/La 2O3/Si High-k gate stacks

P. Ahmet*, D. Kitayama, T. Kaneda, T. Suzuki, T. Koyanagi, M. Kouda, M. Mamatrishat, T. Kawanago, K. Kakushima, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Effects of a thin metal layer (W, Ta, or Mo) inserted at the interface between La2O3 high-k gate dielectric and TiN gate metal were studied. It was found that the inserted metal layer plays crucial role in determining the electrical characteristics of the TiN/Metal/La2O 3/Si gate stack. Our results show that EOT can be scaled to 0.5nm and below by inserting a W layer with optimum thickness at the interface between La2O3 high-k gate dielectric and the TiN gate metal.

Original languageEnglish
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications
Pages305-308
Number of pages4
Edition2
DOIs
StatePublished - 2011
EventSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications - 219th ECS Meeting - Montreal, QC, Canada
Duration: 2 May 20114 May 2011

Publication series

NameECS Transactions
Number2
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period2/05/114/05/11

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    Ahmet, P., Kitayama, D., Kaneda, T., Suzuki, T., Koyanagi, T., Kouda, M., Mamatrishat, M., Kawanago, T., Kakushima, K., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2011). Effects of metal layer insertion on EOT scaling in TiN/Metal/La 2O3/Si High-k gate stacks. In Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications (2 ed., pp. 305-308). (ECS Transactions; Vol. 35, No. 2). https://doi.org/10.1149/13568873