The mesa size effect on light extraction efficiency (LEE) of light-emitting diodes (LEDs) was studied in this work. The mesa area size of three kinds of LEDs that were evaluated include: 350 × 950 μm 2 (small-size embedded electrodes: GaN LED, S-LED), 500 × 950 μm 2 (medium-size embedded electrodes: GaN LED, M-LED), 950 × 950 μ m 2 (large-size embedded electrodes: GaN LED, L-LED). This paper not only discusses LEE, but current density and heat dissipation performance as well. The output power and light extraction efficiency at 700 mA/mm for S-LED, M-LED, and L-LED are 555, 485, and 432 mW and 38.1%, 33.4%, and 29.7%, respectively. The best output power and LEE of S-LED is due to the electron-hole recombination rate increasing. This phenomenon is caused by the greatest current spread and heat dissipation potential.
- Current density
- GaN light-emitting diode (LED)
- heat dissipation
- light extraction efficiency (LEE)
- mesa size