Effects of Mesa Size on Current Spreading and Light Extraction of GaN-Based LEDs

Ray-Hua Horng, Ken Yen Chen, Ching Ho Tien, Jung Chuan Liao

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The mesa size effect on light extraction efficiency (LEE) of light-emitting diodes (LEDs) was studied in this work. The mesa area size of three kinds of LEDs that were evaluated include: 350 × 950 μm 2 (small-size embedded electrodes: GaN LED, S-LED), 500 × 950 μm 2 (medium-size embedded electrodes: GaN LED, M-LED), 950 × 950 μ m 2 (large-size embedded electrodes: GaN LED, L-LED). This paper not only discusses LEE, but current density and heat dissipation performance as well. The output power and light extraction efficiency at 700 mA/mm for S-LED, M-LED, and L-LED are 555, 485, and 432 mW and 38.1%, 33.4%, and 29.7%, respectively. The best output power and LEE of S-LED is due to the electron-hole recombination rate increasing. This phenomenon is caused by the greatest current spread and heat dissipation potential.

Original languageEnglish
Article number7167672
Pages (from-to)1010-1013
Number of pages4
JournalJournal of Display Technology
Volume11
Issue number12
DOIs
StatePublished - 1 Dec 2015

Keywords

  • Current density
  • GaN light-emitting diode (LED)
  • heat dissipation
  • light extraction efficiency (LEE)
  • mesa size

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