Effects of Mesa Size on Current Spreading and Light Extraction of GaN-Based LEDs

Ray-Hua Horng; Ken Yen Chen; Ching Ho Tien; Jung Chuan Liao

doi:10.1109/JDT.2015.2461015

Effects of Mesa Size on Current Spreading and Light Extraction of GaN-Based LEDs

Ray-Hua Horng, Ken Yen Chen, Ching Ho Tien, Jung Chuan Liao

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The mesa size effect on light extraction efficiency (LEE) of light-emitting diodes (LEDs) was studied in this work. The mesa area size of three kinds of LEDs that were evaluated include: 350 × 950 μm ² (small-size embedded electrodes: GaN LED, S-LED), 500 × 950 μm ² (medium-size embedded electrodes: GaN LED, M-LED), 950 × 950 μ m ² (large-size embedded electrodes: GaN LED, L-LED). This paper not only discusses LEE, but current density and heat dissipation performance as well. The output power and light extraction efficiency at 700 mA/mm for S-LED, M-LED, and L-LED are 555, 485, and 432 mW and 38.1%, 33.4%, and 29.7%, respectively. The best output power and LEE of S-LED is due to the electron-hole recombination rate increasing. This phenomenon is caused by the greatest current spread and heat dissipation potential.

Original language	English
Article number	7167672
Pages (from-to)	1010-1013
Number of pages	4
Journal	Journal of Display Technology
Volume	11
Issue number	12
DOIs	https://doi.org/10.1109/JDT.2015.2461015
State	Published - 1 Dec 2015

Keywords

Current density
GaN light-emitting diode (LED)
heat dissipation
light extraction efficiency (LEE)
mesa size

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title = "Effects of Mesa Size on Current Spreading and Light Extraction of GaN-Based LEDs",

abstract = " The mesa size effect on light extraction efficiency (LEE) of light-emitting diodes (LEDs) was studied in this work. The mesa area size of three kinds of LEDs that were evaluated include: 350 × 950 μm 2 (small-size embedded electrodes: GaN LED, S-LED), 500 × 950 μm 2 (medium-size embedded electrodes: GaN LED, M-LED), 950 × 950 μ m 2 (large-size embedded electrodes: GaN LED, L-LED). This paper not only discusses LEE, but current density and heat dissipation performance as well. The output power and light extraction efficiency at 700 mA/mm for S-LED, M-LED, and L-LED are 555, 485, and 432 mW and 38.1%, 33.4%, and 29.7%, respectively. The best output power and LEE of S-LED is due to the electron-hole recombination rate increasing. This phenomenon is caused by the greatest current spread and heat dissipation potential. ",

keywords = "Current density, GaN light-emitting diode (LED), heat dissipation, light extraction efficiency (LEE), mesa size",

author = "Ray-Hua Horng and Chen, {Ken Yen} and Tien, {Ching Ho} and Liao, {Jung Chuan}",

year = "2015",

month = dec,

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doi = "10.1109/JDT.2015.2461015",

language = "English",

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AU - Horng, Ray-Hua

AU - Chen, Ken Yen

AU - Tien, Ching Ho

AU - Liao, Jung Chuan

PY - 2015/12/1

Y1 - 2015/12/1

N2 - The mesa size effect on light extraction efficiency (LEE) of light-emitting diodes (LEDs) was studied in this work. The mesa area size of three kinds of LEDs that were evaluated include: 350 × 950 μm 2 (small-size embedded electrodes: GaN LED, S-LED), 500 × 950 μm 2 (medium-size embedded electrodes: GaN LED, M-LED), 950 × 950 μ m 2 (large-size embedded electrodes: GaN LED, L-LED). This paper not only discusses LEE, but current density and heat dissipation performance as well. The output power and light extraction efficiency at 700 mA/mm for S-LED, M-LED, and L-LED are 555, 485, and 432 mW and 38.1%, 33.4%, and 29.7%, respectively. The best output power and LEE of S-LED is due to the electron-hole recombination rate increasing. This phenomenon is caused by the greatest current spread and heat dissipation potential.

AB - The mesa size effect on light extraction efficiency (LEE) of light-emitting diodes (LEDs) was studied in this work. The mesa area size of three kinds of LEDs that were evaluated include: 350 × 950 μm 2 (small-size embedded electrodes: GaN LED, S-LED), 500 × 950 μm 2 (medium-size embedded electrodes: GaN LED, M-LED), 950 × 950 μ m 2 (large-size embedded electrodes: GaN LED, L-LED). This paper not only discusses LEE, but current density and heat dissipation performance as well. The output power and light extraction efficiency at 700 mA/mm for S-LED, M-LED, and L-LED are 555, 485, and 432 mW and 38.1%, 33.4%, and 29.7%, respectively. The best output power and LEE of S-LED is due to the electron-hole recombination rate increasing. This phenomenon is caused by the greatest current spread and heat dissipation potential.

KW - Current density

KW - GaN light-emitting diode (LED)

KW - heat dissipation

KW - light extraction efficiency (LEE)

KW - mesa size

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SN - 1551-319X

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ER -

Effects of Mesa Size on Current Spreading and Light Extraction of GaN-Based LEDs

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Keywords

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