Effects of low-temperature Si buffer thickness and SiGe oxidation on sensitivity of Si1-xGex nanowire

Yi Lung Lai, Tai Yuan Chang, Kow-Ming Chang, Chu Feng Chen, Chiung Hui Lai*, Yi Ming Chen, Allen Jong Woei Whang, Hui Lung Lai, Huai Yi Chen, Shiu Yu Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Si1-xGex nanowire biosensors are attractive for their high sensitivity due to the large surface-to-volume ratio, high carrier mobility, and silicon compatibility. In this work, we study the effect of the thickness of the low-temperature Si (LT-Si) buffer layer on an insulator on the sensitivity of oxidized Si1-xGex nanowire samples with different Ge contents by increasing the Si buffer thickness from 20 to 60 nm. 3-Aminopropyltrimethoxysilane (APTMS) was used as a biochemical reagent. It was demonstrated that, with the proper Ge content and LT-Si buffer thickness, the sensitivity of the Si1-xGex nanowire is high and it can be further improved by Si1-xGex oxidation. This can be attributed to the reduction of the diameter to the nanometer order, which gives rise to an increased surface-to-volume ratio and further enhances the sensitivity of the biosensor.

Original languageEnglish
Article number06FG12
JournalJapanese Journal of Applied Physics
Volume54
Issue number6
DOIs
StatePublished - 1 Jun 2015

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