Effects of low temperature annealing on the ultrathin La2O 3 gate dielectric; Comparison of post deposition annealing and post metallization annealing

J. A. Ng*, Y. Kuroki, N. Sugii, K. Kakushima, S. I. Ohmi, K. Tsutsui, T. Hattori, H. Iwai, H. Wong

*Corresponding author for this work

Research output: Contribution to journalConference article

43 Scopus citations

Abstract

This work reports the effects of low-temperature post-deposition annealing (PDA) and post-metallization annealing (PMA) on the electrical properties of ultrathin (with EOT ranging from 1.29 nm to 2.33 nm) La2O3 gate dielectric films. We found that positive charges were generated during the PDA as evidenced by the negative flat-band voltage (VFB) shift. Forming of La-silicate interface layer and a reduction in the channel mobility are found for the PDA samples at temperature higher than 300°C. Better electrical characteristics were achieved by the PMA. The PMA sample has a peak channel mobility of 319 cm2 /Vs.

Original languageEnglish
Pages (from-to)206-209
Number of pages4
JournalMicroelectronic Engineering
Volume80
Issue numberSUPPL.
DOIs
StatePublished - 17 Jun 2005
Event14th Biennial Conference on Insulating Films on Semiconductors -
Duration: 22 Jun 200524 Jun 2005

Keywords

  • Gate Dielectric
  • High-k
  • LaO
  • MOSFET
  • Post-Deposition Annealing
  • Post-Metallization Annealing

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