In this paper, we report on high-k composite oxides that are formed by depositing multiple layers of HfO2 and La2O3 on In0.53Ga0.47As for MOS device application. Both multilayer HfO2 (0.8 nm)/La2O3 (0.8 nm)/In0.53Ga0.47As and La 2O3 (0.8 nm)/HfO2 (0.8 nm)/In0.53Ga0.47As MOS structures were investigated. The effects of oxide thickness and postdeposition annealing (PDA) temperature on the interface properties of the composite oxide MOS capacitors were studied. It was found that a low CET of 1.41nm at 1 kHz was achieved using three-layer composite oxides. On the other hand, a small frequency dispersion of 2.8- and an excellent Dit of 7.0 × 1011cm-2&eV-1 can be achieved using multiple layers of La2O 3 (0.8 nm) and HfO2 (0.8 nm) on the In0.53Ga0.47As MOS capacitor with optimum thermal treatment and layer thickness.