Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

D. Zade*, S. Sato, K. Kakushima, A. Srivastava, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, C. K. Sarkar, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

The effect of La2O3 incorporation on the spatial trap distribution in HfO2 gate dielectrics is investigated. The incorporation of La2O3 in HfO2 dielectric has been found to improve the effective mobility in addition to reduced interface-state density. The trap distribution analysis in the HfO2 layer extracted by combining the charge pumping (CP) method and the low-frequency noise (LFN) method has revealed significant reduction in the amount of traps at HfO2/SiO2-interlayer interface and in the HfO2 layer by La2O3 incorporation.

Original languageEnglish
Pages (from-to)746-750
Number of pages5
JournalMicroelectronics Reliability
Volume51
Issue number4
DOIs
StatePublished - Apr 2011

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