Effects of laser sources on the structural damage mechanisms and reverse-bias leakages of laser lift-off GaN-based LEDs

Ji Hao Cheng*, Cheng Liao, Ping Wei Huang, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The frequency-tripled Nd YAG laser (355nm) and the KrF pulsed excimer laser (248 nm) were used to separate GaN from sapphire substrates. The laser damage mechanism of these two laser sources and effects on the reverse-bias leakages of GaN-based light-emitting diodes (LEDs) were studied.

Original languageEnglish
Title of host publicationECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9
Pages123-125
Number of pages3
Edition7
DOIs
StatePublished - 1 Dec 2008
EventState-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 12 Oct 200817 Oct 2008

Publication series

NameECS Transactions
Number7
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period12/10/0817/10/08

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  • Cite this

    Cheng, J. H., Liao, C., Huang, P. W., & Wu, Y-C. (2008). Effects of laser sources on the structural damage mechanisms and reverse-bias leakages of laser lift-off GaN-based LEDs. In ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 (7 ed., pp. 123-125). (ECS Transactions; Vol. 16, No. 7). https://doi.org/10.1149/1.2983167