Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based leds

Ji Hao Cheng*, Wei Chih Peng, Yew-Chuhg Wu, Hao Ouyang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The KrF pulsed excimer laser (248 nm) and the frequency-tripled Nd YAG laser (355nm) were used to separate GaN thin films from sapphire substrates. The effect of these two laser sources on the reverse-bias leakages of InGaN-GaN light-emitting diodes (LEDs) were studied.

Original languageEnglish
Title of host publicationECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface
Pages285-287
Number of pages3
Edition2
DOIs
StatePublished - 1 Dec 2007
Event46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting - Chicago, IL, United States
Duration: 6 May 200710 May 2007

Publication series

NameECS Transactions
Number2
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period6/05/0710/05/07

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    Cheng, J. H., Peng, W. C., Wu, Y-C., & Ouyang, H. (2007). Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based leds. In ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface (2 ed., pp. 285-287). (ECS Transactions; Vol. 6, No. 2). https://doi.org/10.1149/1.2731196