Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes

Yew-Chuhg Wu*, Ji Hao Cheng, Wei Chih Peng, Hao Ouyang

*Corresponding author for this work

Research output: Contribution to journalArticle

50 Scopus citations

Abstract

The KrF pulsed excimer laser (248 nm) and the frequency-tripled neodymium doped yttrium aluminum garnet laser (355 nm) have been used to separate GaN thin films from, sapphire substrates and transfer to bond other substrate. However, these processes would increase the dislocation density, resulting in an increase of the leakage current. In this study, the effects of these two laser sources on the reverse-bias leakages of InGaN-GaN light-emitting diodes were studied.

Original languageEnglish
Article number251110
JournalApplied Physics Letters
Volume90
Issue number25
DOIs
StatePublished - 2 Aug 2007

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