Effects of keV electron irradiation on the avalanche-electron generation rates of three donors on oxidized silicon

Chih Tang Sah*, Jack Yuan Chen Sun, Joseph Jeng Tao Tzou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

After keV electron beam irradiation of oxidized silicon, the avalanche-electron-injection generation rates and densities of the bulk compensating donor, the interface states, and the turnaround trap all increase. Heating at 200°C can anneal out these three donor-like traps, however, it cannot restore the generation rates back to their original and lower pre-keV electron irradiation values. The experimental results also indicate that all three traps may be related to the same mobile impurity species whose bonds are loosened by the keV electrons and then broken or released by the avalanche injected electrons.

Original languageEnglish
Pages (from-to)4378-4381
Number of pages4
JournalJournal of Applied Physics
Volume54
Issue number8
DOIs
StatePublished - 1983

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