Experimental results are presented which show the generation of several neutral oxide hole traps by keV electron irradiation. The density of the existing hole trap increases by about a factor of 2 after 4-keV electron irradiation. The added traps appear to be associated with broken silicon-oxygen bonds by the keV electrons. A new oxide hole trap of cross section of 1.4×10-15 cm2 is also observed in dry oxides with post-oxidation anneal in argon and post-metallization anneal in forming gas. This new hole trap may be related to an oxygen deficient or hydrogen-bond center. Heating at 370 °C anneals out the new hole trap but it does not restore the broken bonds.