Effects of keV electron irradiation on optical generation of hole traps in thermal oxide on silicon

Joseph Jengtao Tzou*, Jack Yuan Chen Sun, Chih Tang Sah

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Experimental results are presented which show the generation of several neutral oxide hole traps by keV electron irradiation. The density of the existing hole trap increases by about a factor of 2 after 4-keV electron irradiation. The added traps appear to be associated with broken silicon-oxygen bonds by the keV electrons. A new oxide hole trap of cross section of 1.4×10-15 cm2 is also observed in dry oxides with post-oxidation anneal in argon and post-metallization anneal in forming gas. This new hole trap may be related to an oxygen deficient or hydrogen-bond center. Heating at 370 °C anneals out the new hole trap but it does not restore the broken bonds.

Original languageEnglish
Pages (from-to)846-851
Number of pages6
JournalJournal of Applied Physics
Volume55
Issue number4
DOIs
StatePublished - 1984

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