Effects of interfacial native oxide on electrical properties of bonded GaAs wafers

Po Chun Liu*, Cheng Lun Lu, Wei Chih Peng, Yew-Chuhg Wu, Hao Ouyang

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

The electrical characteristics and microstructures of p-type and n-type (100) GaAs bonded interfaces were systematically investigated. Experimental results indicated that GaAs did not bond directly to itself, but via an amorphous oxide layer at 400°C. When temperatures increased above 400°C, the oxide bonded area declined and finally disappeared. For p-type bonded GaAs, electrical resistance decreased with bonding temperature. As for n-type (100) GaAs, electrical resistance decreased with bonding temperature. However, the resistance increased with temperatures exceeding 850°C due to the thermal conversion and in-diffusion of interfacial native oxide.

Original languageEnglish
Pages374-382
Number of pages9
StatePublished - 1 Dec 2005
Event207th ECS Meeting - Quebec, Canada
Duration: 16 May 200520 May 2005

Conference

Conference207th ECS Meeting
CountryCanada
CityQuebec
Period16/05/0520/05/05

Keywords

  • Electrical property
  • Gallium Arsenide
  • Native oxide
  • Wafer bonding

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    Liu, P. C., Lu, C. L., Peng, W. C., Wu, Y-C., & Ouyang, H. (2005). Effects of interfacial native oxide on electrical properties of bonded GaAs wafers. 374-382. Paper presented at 207th ECS Meeting, Quebec, Canada.