TY - JOUR
T1 - Effects of indium concentration on the efficiency of amorphous In-Zn-O/SiOx/n-Si hetero-junction solar cells
AU - Fang, Hau Wei
AU - Hsien, Tsung-Eong
AU - Juang, Jenh-Yih
PY - 2014/1/1
Y1 - 2014/1/1
N2 - Semiconductor-insulator-semiconductor (SIS) hetero-junction solar cells comprising of the amorphous indium zinc oxide (a-IZO) layer directly deposited onto the n-type Si substrates by pulsed laser deposition were fabricated. Characterizations on the physical properties of the a-IZO layer and the a-IZO/SiOx interface as a function of In/(Zn+In) ratio were carried out to delineate their influences on the photovoltaic performance of SIS solar cells. The optical and electrical analyses indicated that the resistivity of a-IZO films decreased with increasing In concentration, reaching 4.5×10-4 Ω-cm for In/(Zn+In)=0.5, which also exhibited a transmittance higher than 80% in the visible-light wavelength range. Moreover, combining with an optimally controlled insulating SiOx layer (about 2.0 nm), the device exhibited excellent SIS solar cell performance with open-circuit voltage of 0.38 V, short-circuit current density of 45.1 mA cm -2, fill factor of 49.7% and a conversion efficiency of 8.4% under the AM1.5 illumination condition. The dramatic performance enhancement was attributed to the reduction of effective interface trap densities at the a-IZO/SiOx interface and the increase of carrier mobility in the a-IZO layer resulted from the increase of In/(In+Zn) ratio.
AB - Semiconductor-insulator-semiconductor (SIS) hetero-junction solar cells comprising of the amorphous indium zinc oxide (a-IZO) layer directly deposited onto the n-type Si substrates by pulsed laser deposition were fabricated. Characterizations on the physical properties of the a-IZO layer and the a-IZO/SiOx interface as a function of In/(Zn+In) ratio were carried out to delineate their influences on the photovoltaic performance of SIS solar cells. The optical and electrical analyses indicated that the resistivity of a-IZO films decreased with increasing In concentration, reaching 4.5×10-4 Ω-cm for In/(Zn+In)=0.5, which also exhibited a transmittance higher than 80% in the visible-light wavelength range. Moreover, combining with an optimally controlled insulating SiOx layer (about 2.0 nm), the device exhibited excellent SIS solar cell performance with open-circuit voltage of 0.38 V, short-circuit current density of 45.1 mA cm -2, fill factor of 49.7% and a conversion efficiency of 8.4% under the AM1.5 illumination condition. The dramatic performance enhancement was attributed to the reduction of effective interface trap densities at the a-IZO/SiOx interface and the increase of carrier mobility in the a-IZO layer resulted from the increase of In/(In+Zn) ratio.
KW - Hetero-junction structure solar cells
KW - Indium zinc oxide
KW - Pulsed laser deposition
UR - http://www.scopus.com/inward/record.url?scp=84889026951&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2013.11.003
DO - 10.1016/j.solmat.2013.11.003
M3 - Article
AN - SCOPUS:84889026951
VL - 121
SP - 176
EP - 181
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -