Effects of independent double-gated configuration on polycrystalline-Si nonvolatile memory devices

Wei Chen Chen; Horng-Chih Lin; Yu Chia Chang; Tiao Yuan Huang

doi:10.1063/1.3238362

Effects of independent double-gated configuration on polycrystalline-Si nonvolatile memory devices

Wei Chen Chen^*, Horng-Chih Lin, Yu Chia Chang, Tiao Yuan Huang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

A polycrystalline-Si thin-film transistor configured with independent double-gated structure and ultrathin channel film is proposed for use as a Si-oxide-nitride-oxide-Si memory device. Taking advantage of additional control gate bias offered by the independent double-gated scheme in addition to the driving gate, this work demonstrated that the reading window and programming efficiency can be improved by applying a proper control gate bias. It is also found that the relationship between programming/erasing speed and control gate bias is strongly related to channel film thickness. Our results indicate that the independent double-gated device possesses promising potential for future nonvolatile memory applications.

Original language	English
Article number	133502
Journal	Applied Physics Letters
Volume	95
Issue number	13
DOIs	https://doi.org/10.1063/1.3238362
State	Published - 12 Oct 2009

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abstract = "A polycrystalline-Si thin-film transistor configured with independent double-gated structure and ultrathin channel film is proposed for use as a Si-oxide-nitride-oxide-Si memory device. Taking advantage of additional control gate bias offered by the independent double-gated scheme in addition to the driving gate, this work demonstrated that the reading window and programming efficiency can be improved by applying a proper control gate bias. It is also found that the relationship between programming/erasing speed and control gate bias is strongly related to channel film thickness. Our results indicate that the independent double-gated device possesses promising potential for future nonvolatile memory applications.",

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AU - Huang, Tiao Yuan

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AB - A polycrystalline-Si thin-film transistor configured with independent double-gated structure and ultrathin channel film is proposed for use as a Si-oxide-nitride-oxide-Si memory device. Taking advantage of additional control gate bias offered by the independent double-gated scheme in addition to the driving gate, this work demonstrated that the reading window and programming efficiency can be improved by applying a proper control gate bias. It is also found that the relationship between programming/erasing speed and control gate bias is strongly related to channel film thickness. Our results indicate that the independent double-gated device possesses promising potential for future nonvolatile memory applications.

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Effects of independent double-gated configuration on polycrystalline-Si nonvolatile memory devices

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