Effects of implantation energy and annealing temperature on the structural evolution of Ge+-implanted amorphous Si

J. H. He, H. H. Lin, Wen-Wei Wu, L. J. Chen*

*Corresponding author for this work

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in Ge+-preamorphized silicon layers. (0 0 1)Si wafers were preamorphized with 5 and 10 keV Ge+ to a dose of 5 × 1015 ions/cm2. A higher density of embedded nanocrystallites was found to be present in as-implanted amorphous Si layer for 10 keV Ge+ than that for 5 keV Ge+. The densities of embedded nanocrystallites in Ge+-preamorphized Si layer with 5 and 10 keV Ge+ were found to diminish with annealing temperature first then increase. The effects of ion-implantation energy and annealing temperature on the structural evolution in Ge+-implanted amorphous Si are discussed in terms of ion-beam induced annealing and free energy change of the system. The depth dependence on the density of embedded nanocrystallites is attributed to the nonuniform distribution of Ge atoms.

Keywords

  • Auto-correlation function
  • Implantation
  • Implantation energy
  • Nanocrystallite
  • Preamorphization
  • TEM

Fingerprint Dive into the research topics of 'Effects of implantation energy and annealing temperature on the structural evolution of Ge<sup>+</sup>-implanted amorphous Si'. Together they form a unique fingerprint.

Cite this