Effects of Illumination on the Noise Behavior of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

Ya-Hsiang Tai, Chun Yi Chang, Chung Lun Hsieh

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this paper, we investigate the response of low-frequency noise to the light for the amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs). Compared with the case of nonillumination, the noise level increases with the light intensity. We find that the induced noise is more related to the drain current (I D ) with or without illumination, even though the corresponding gate voltage can be different. With fixed light intensity, the noise induced at the same I D keeps the same regardless of the illumination history. The noise mechanism is analyzed to be mainly the carrier mobility fluctuation, but carrier number fluctuation becomes important under illumination. We speculate that oxygen vacancies generated by light affect the trapping and releasing of carrier. It thus leads to the noise increasing with illumination.

Original languageEnglish
Article number7384679
Pages (from-to)333-337
Number of pages5
JournalJournal of Display Technology
Volume12
Issue number7
DOIs
StatePublished - 1 Jul 2016

Keywords

  • Amorphous indium gallium zinc oxide (a-IGZO)
  • illumination stress
  • low frequency noise (LFN)
  • thin film transistors (TFTs)

Fingerprint Dive into the research topics of 'Effects of Illumination on the Noise Behavior of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors'. Together they form a unique fingerprint.

Cite this