Effects of hydrogen on electrical and chemical properties of low-k hydrogen silsesquioxane as an intermetal dielectric for nonetchback processes

T. C. Chang*, Po-Tsun Liu, F. Y. Shih, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The hydrogen plasma and hydrogen ion implantation post-treatments are applied for the first time to low-k hydrogen silsesquioxane (HSQ). These two post-treatments can efficiently abate the poisoned via problem of HSQ as an intermetal dielectric for nonetchback process. Both via resistance and dielectric constant are reduced using the hydrogen post-treatments. We propose that the role of hydrogen is to passivate the dangling bonds in the porous HSQ film and to prevent HSQ from moisture uptake and O2 plasma attack during the nonetchback integrated process.

Original languageEnglish
Pages (from-to)390-392
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume2
Issue number8
DOIs
StatePublished - 1 Aug 1999

Fingerprint Dive into the research topics of 'Effects of hydrogen on electrical and chemical properties of low-k hydrogen silsesquioxane as an intermetal dielectric for nonetchback processes'. Together they form a unique fingerprint.

Cite this